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| HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFH/IXFT/IXFX14N100 1000 V 14 A 0.75 W IXFH/IXFT/IXFX15N100 1000 V 15 A 0.70 W trr 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 14N100 15N100 14N100 15N100 14N100 15N100 Maximum Ratings 1000 1000 20 30 14 15 56 60 14 15 45 5 360 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns W C C C C Nm/lb.in. g TO-247 AD (IXFH) (TAB) PLUS 247TM (IXFX) (TAB) G D TO-268 (D3) (IXFT) G S (TAB) 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 6 Features q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Applications q DC-DC converters q Battery chargers q Switched-mode and resonant-mode power supplies q DC choppers q AC motor control q Temperature and lighting controls Advantages q Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) or mounting clip or spring (PLUS 247TM) q High power surface mountable package q High power density 97535B (1/99) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 4.5 100 TJ = 25C TJ = 125C 250 1 0.75 0.70 V V nA mA mA W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 14N100 15N100 Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-4 IXFH14N100 IXFH15N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 10 4500 430 150 27 30 120 30 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 220 30 85 0.35 (TO-247 Case Style) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W IXFT14N100 IXFT15N100 IXFX15N100 IXFX14N100 TO-247 AD (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 W (External), Dim. Millimeter Min. Max. A B C D E F G H J K L M 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = IS -di/dt = 100 A/ms, VR = 100 V Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 14N100 15N100 14N100 15N100 14 15 56 60 1.5 A A A A V N 1.5 2.49 PLUS247TM (IXFX) Outline IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % TJ TJ TJ TJ TJ TJ = 25C = 125C = 25C = 125C = 25C = 125C 200 350 1 2 10 15 ns ns mC mC A A Dim. A A1 A2 b b1 b2 C D E e L L1 Q R TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH14N100 IXFH15N100 20 TJ = 25OC IXFT14N100 IXFT15N100 IXFX15N100 IXFX14N100 16 VGS = 9V 8V 7V 6V TJ = 125OC 5V VGS = 9V 8V 7V 6V 5V 16 12 ID - Amperes 12 8 4V ID - Amperes 8 4V 4 0 4 0 0 4 8 12 16 20 0 4 8 12 16 20 VDS - Volts VDS - Volts Fig.1 Output Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0.8 TJ = 25OC VGS = 10V TJ = 125OC Fig.2 Output characteristics at elevated temperature 2.2 2.0 1.8 1.6 1.4 1.2 1.0 25 ID = 15A VGS = 10V RDS(ON) - Normalized RDS(ON) - Normalized ID = 7.5A 0 3 6 9 12 15 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig.3 RDS(on) vs. Drain Current 20 16 IXF_15N100 Fig.4 14 12 Temperature Dependence of Drain to Source Resistance ID - Amperes 12 8 4 0 IXF_14N100 ID - Amperes 10 8 6 4 2 TJ = 125oC TJ = 25oC -50 -25 0 25 50 75 100 125 150 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TC - Degrees C VGS - Volts Fig.5 Drain Current vs. Case Temperature Fig.6 Input admittance (c) 2000 IXYS All rights reserved 3-4 IXFH14N100 IXFH15N100 12 10 VDS = 500V Vds=300V = 7.5A ID=30A = 10mA IG=10mA IXFT14N100 IXFT15N100 IXFX15N100 IXFX14N100 5000 Ciss VGS - Volts 8 6 4 2 0 Capacitance - pF 2500 1000 500 Crss Coss f = 1MHz 250 100 0 40 80 120 160 200 240 280 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Fig.7 Gate Charge Characteristic Curve 40 Fig.8 Capacitance Curves 32 ID - Amperes 24 TJ = 125OC 16 TJ = 25OC 8 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Volts Fig.9 Source current vs Source drain voltage. 1 R(th)JC - K/W 0.1 Single pulse 0.01 10-3 10-2 10-1 100 101 Pulse Width - Seconds Fig.10 Transient Thermal Impedance (c) 2000 IXYS All rights reserved 4-4 |
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